Feasibility of IDDQ Tests for Shorts in Deep Submicron ICs
نویسندگان
چکیده
Quiescent supply current(IDDQ) in deep submicron ICs is derived by circuit simulation and feasibility of IDDQ tests is examined for short defects in ICs fabricated with 0.18μm CMOS process. The results show that IDDQ of each gate depends on input logic values and that shorts can be detected by IDDQ testing if some process variations are small.
منابع مشابه
A Built-In IDDQ Testing Circuit*
Although IDDQ testing has become a widely accepted defect detection technique for CMOS ICs, its effectiveness in very deep submicron technologies is threatened by the increased transistor leakage current. In this paper, a built-in IDDQ testing circuit is presented, that aims to extend the viability of IDDQ testing in future technologies and first experimental results are discussed.
متن کاملDetection of Resistive Shorts in Deep Sub-micron Technologies
Current-based tests are the most effective methods available to detect resistive shorts. Delta IDDQ testing is the most sensitive variant and can handle off-state currents of 10-100 mA of a single core. Nevertheless this is not sufficient to handle the next generations of very deep sub-micron technologies. Moreover delay-fault testing and very-low voltage testing are not a real alternative for ...
متن کاملIdentifying defects in deep-submicron CMOS ICs
Given the oft-cited difficulty of testing modern integrated circuits, the fact that CMOS ICs lend themselves to IDDQ testing is a piece of good fortune. But that valuable advantage is threatened by the rush of semiconductor technology to smaller feature sizes and faster, denser circuits, in line with the Semiconductor Industry Association's (SIA) Roadmap--its forecast for the CMOS IC industry. ...
متن کاملIs IDDQ testing not applicable for deep submicron VLSI in year 2011?
In this work, IDDQ current for the deep submicron VLSI in year 2011 is estimated with a statistical approach according to the International Technology Roadmap for Semiconductors 1999 Edition considering process variations and different input vectors. The estimated results show that the standard deviation of the IDDQ current is proportional to the square root of the circuit size and the IDDQ cur...
متن کاملGuest Editors' Introduction: Defect-Oriented Testing in the Deep-Submicron Era
0740-7475/02/$17.00 © 2002 IEEE September–October 2002 CMOS IC SCALING increases device/interconnect density to allow more logic on a die at higher clock rates, enhancing overall performance. Improvements in process technology enable integration on a single die of circuits with different functions that require distinct manufacturing process steps. With added constraints of reduced time to marke...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012